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  PIERS Online Vol. 3 No. 7 2007 pp: 976-979

A 0.75V CMOS Low-Noise Amplifier for Ultra Wide-Band Wireless Receiver

Hui I Wu, Zi.Hao Hsiung, and Christina F. Jou

doi:10.2529/PIERS060907041726

[PDF Full Text (201 KB)]
Downloads: 1884

Abstract:

An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UWB LNA achieves simulated power gain > 10 dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 μm CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.

References:

1. Lu, Y., K. S. Yeo, A. Cabuk, J. Ma, M. A. Do, and Z. Lu, "A novel CMOS low-noise amplifier design for 3.1-to 10.6-GHz ultra-wide-band wireless receivers," IEEE Transactions on Circuits and Systems-I: Regular Papers, Vol. 53, No. 8, August, 2006.

2. Bevilacqua, A. and A. M. Niknejad, "An ultra-wide-band CMOS lownoise amplifier for 3.1-10.6-GHz wireless receivers," IEEE J. Solid-State Circuits, Vol. 39, No. 12, 2259-2268, Dec., 2004.
doi:10.1109/JSSC.2004.836338

3. Chang, B.-Y. and C. F. Jou, "Design of a 3.1-10.6 GHz low-voltage, low-power CMOS low-noise amplifier forultra-wideband receivers," IEEE APMC2005 Proceedings, 2005.

4. Liu, R.-C., K.-L. Deng, and H. Wang, "A 0.6-22 GHz broadband CMOS distributed amplifier," IEEE Radio Frequency Integrated Circuits Symp. Dig. Papers, 103-106, 2002.

5. Chen, S.-C., R.-L. Wang, M.-L. Kung, and H.-C. Hung, "An integrated CMOS low noise amplifier for ultra wide band applications," International Conference on Wireless Networks, Communications and Mobile Computing, 2005.

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